摘要
采用MOCVD实现了AlGaAs/GaAs量子阱结构,获得了连续输出20W激光二极管线列阵,线列阵长度1.0cm,激射波长808±4nm。
The device structure with a AlGaAs/GaAs quantum well is expitaxially grown by metalorganic chemical vapour deposition(MOCVD). The CW output power levels of 20W have been obtained from 1.0cm laser diode linear arrays lasing at 808±4nm.
出处
《高技术通讯》
EI
CAS
CSCD
1998年第11期7-9,共3页
Chinese High Technology Letters