摘要
采用ＭＯＣＶＤ实现了ＡｌＧａＡｓ／ＧａＡｓ量子阱结构，获得了连续输出２０Ｗ激光二极管线列阵，线列阵长度１．０ｃｍ，激射波长８０８±４ｎｍ。
The device structure with a AlGaAs/GaAs quantum well is expitaxially grown by metalorganic chemical vapour deposition(MOCVD). The CW output power levels of 20W have been obtained from 1.0cm laser diode linear arrays lasing at 808±4nm.
出处
《高技术通讯》
EI
CAS
CSCD
1998年第11期7-9,共3页
Chinese High Technology Letters
