摘要
发光二极管(LED)的低外量子效率严重制约了LED的发展,本文主要介绍了提高GaN基LED外量子效率途径的最新进展,包括芯片非极性面/半极性面生长技术、分布布拉格反射层(DBR)结构、改变LED基底几何外形来改变光在LED内部反射的路径、表面粗化处理,以及新近的光子晶体技术和全息技术等。并对纳米压印与SU8相结合技术在提高LED外量子光效率方面进行了初步探索。
The low external quantum efficiency ties up the development of LEDs.This article mainly introduces recent research progress of increasing the external quantum efficiency of GaN-based LEDs.The ways of improvement mainly include that micro-surface roughening,micro-pattern substrates and distributed Bragg reflector（DBR） structure.Of course,recent methods,for example,non-polar or semi-polar plane growth technology,photonic crystal and holography technology are also discussed.At the same time,preliminary study on the combination of nano-imprint lithography and SU8 technology is also noted in this paper.
出处
《中国照明电器》
2010年第3期15-20,共6页
China Light & Lighting
