退火对射频溅射法制备a-Si∶H∶Y合金薄膜结构和性质的影响

Effect of Annealing on Structure and Properties of a Si∶Y∶H Alloy Films Deposited by Radio Frequency Sputtering

对射频溅射法制备的ａＳｉ∶Ｈ∶Ｙ薄膜进行电子衍射、红外吸收和卢瑟福背散射测试，结果表明，退火可从以下几方面改变膜的结构和性质：使合金膜晶化，从非晶态向多晶或单晶态转化；改变原子间的键合状态，使某些ＳｉＨ键断裂，形成更多的ＳｉＹ键；Ｙ原子向Ｓｉ衬底方向扩散，使膜表面Ｙ的浓度降低，Ｓｉ∶Ｙ合金层厚度增大。

Electronic diffraction, infrared absorption and backscattering measurements show that heat annealing can affect the properties of the a Si∶H∶Y films deposited by rf sputtering on following aspects. (1) It makes the films to be crystallized, i.e., transform them from amorphous state to polycrystal or crystal state. (2) It changes the bound states of the atoms, break some Si H bend and produce more Si Y bend. (3) It makes Y atoms to diffuse to Si substrate, reduces Y concentration on film surfaces and increases the thickness of the Si∶Y alloy layer.