低温高速率沉积非晶硅薄膜及太阳电池

Low temperature and High deposition rate fabricating a-Si:H thin films and solar cells

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,保持沉积温度在125℃制备非晶硅薄膜材料及太阳电池。在85 Pa的低压下以及400～667 Pa的高压下,改变Si H4浓度和辉光功率等沉积参数,对本征a-Si材料的性能进行优化。结果表明,在高压下,合适的Si H4浓度和压力功率比可以使a-Si材料的光电特性得到优化,并且薄膜的沉积速率得到一定程度的提高。采用低压低速和高压高速的沉积条件,在125℃的低温条件下制备出效率为6.7%的单结a-Si电池,高压下本征层a-Si材料的沉积速率由0.06～0.08 nm/s提高到0.17～0.19 nm/s。

A series of amorphous silicon thin films and solar cells are fabricated by RF-PECVD at deposition temperature of Ts=125 ℃.The properties of a-Si：H films are optimized through the variation of power and silane concentration under low pressure（85 Pa） and high pressure（400-667 Pa）.The results show that under the high pressure conditions,the electrical and structural properties of a-Si：H films are improved at proper silane concentration and pressure/power ratio（Pg/P）.At substrate temperature of Ts=125 ℃,the single junction a-Si：H solar cells with efficiency of 6.7% and high deposition rate of 0.19 nm/s are obtained.