摘要
基于特许0.35μm EEPROM CMOS标准工艺设计了一种单片集成光接收机芯片,集成了双光电探测器(DPD)、调节型共源共栅(RGC)跨阻前置放大器(TIA)、三级限幅放大器(LA,limiting amplifier)和输出电路,其中RGCTIA能够隔离光电二极管的电容影响,并可以有效地扩展光接收机的带宽。测试结果表明,光接收机的3dB带宽为821MHz,在误码率为10-9、灵敏度为-11dBm的条件下,光接收机的数据传输速率达到了1Gb/s;在3.3V电压下工作,芯片的功耗为54mW。
A monolithically integrated optical receiver is realized in chartered 0. 3Sμm EEPROM CMOS process. The optical receiver includes an integrated double photodiode detector(DPD), a regulated cascode(RGC) transimpedance amplifier(TIA), three limiting amplifiers and an output circuit. The RGC TIA could isolate the influence of the photodiode capacitance and expand effectively the bandwidth of the optical receiver. The experiment results show that the receiver achieves a 821 MHz 3 dB bandwidth and a data rate of 1 Gb/s is achieved at a bit-error-rate of 10-9 and an optical power of -11 dBm. The chip dissipates 54 mW under a single 3.3 V supply.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2010年第4期520-523,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60676038)
国家"863"基金资助项目(2009AA03Z415)
教育部博士点新教师基金资助项目(200800561121)