喷射CVD法制备金刚石厚膜及其内应力分析

Research on the stress of thick diamond films by DC arc plasma jet CVD method

采用直流电弧等离子体喷射CVD法制备出金刚石薄膜,利用扫描电子显微镜(SEM)、Raman光谱及X射线衍射(XRD)等研究基底温度对金刚石厚膜生长特性及内应力的影响。结果表明:950℃基底温度生长的金刚石厚膜结晶性能较好,纯度较高;而850℃和1050℃生长的金刚石厚膜表面呈现大量的孪晶缺陷,结晶度较低,同时出现较多的非金刚石碳,纯度较低。随着基底温度的增加,(111)晶面和(311)晶面的衍射峰强度逐渐增强,(220)晶面的衍射峰强度逐渐降低。850℃和950℃基底温度生长的金刚石厚膜的宏观应力和微观应力都呈现出拉应力,1050℃基底温度生长的金刚石厚膜的宏观应力和微观应力都呈现出压应力。

The thick diamond films were deposited uisng DC arc plamsa jet CVD. The influence of substrates temperature on the growth and stress of the diamond films were investigated by SEM, Raman spectra and XRD. The results shown that the thick diamond films deposited at 950℃ exhibited excellent crystal quality and high diamond phase purity,while those grown at 850℃and 1 050 ℃ were of poor crystal quality and with large amount of twin defects and non-diamond carbons. In addition, as the increase of substrates temperature,the intensity of （111） and （all） reflection increased and that of （220） decreased. Furthermore,The macro and micro stress of the thick diamond films deposited at 850℃ and 950 ℃ were all tensile one. However,those of the thick diamond films at 1050℃ were all compressive one.