锑膜修饰电极差分脉冲溶出伏安法测定痕量锡

Antimony film electrode for determination of Sn using differential pulse stripping voltammetry

目的：建立一种新的快速检测方法测定实际样品中的Sn。方法：采用同位镀锑膜玻碳电极,利用差分脉冲溶出伏安法对痕量Sn进行测定。结果：优化实验条件下,相关性好（r〉0.99）,测得Sn^2＋的线性范围和最低检出限分别为10-120μg/L和0.50μg/L,样品加标回收率为96%-98%。结论：锑膜电极可成为继铋膜电极之后又一种新的环保型膜电极,用于实际样品中重金属的检测。

Objective：To establish a new method for determination of Sn^2＋ in presence of Cetyltrimethylammonium Bromide（CTAB）.Methods：Differential pulse stripping voltammetry with in situ diposited SbFE.Results：Under optimized conditions,it was showed a good relativity（r0.99）.A linear response was obtained over the concentration range 10-120 μg/L and the lower detection limit was 0.50 μg/L.Conclusion：The data confirm that the stripping performance of antimony film electrode compares favorably to that of bismuth film electrodes and it is suitable for the determination of trace mental ions in real sample.