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退火工艺对含Ti-Al阻挡层的硅基Pb(Zr_(0.4),Ti_(0.6))O_3铁电电容器结构和性能影响的研究 被引量：2

Effect of Annealing Conditions on the Structural and Physical Properties of Si-based Pb(Zr_(0.4),Ti_(0.6))O_3 Ferroelectric Capacitors with Ti-Al Film As a Barrier Layer
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摘要 应用非晶的Ti-Al薄膜为导电阻挡层,采用射频磁控溅射法和溶胶-凝胶法在Si衬底上制备了La0.5Sr0.5CoO3/Pb(Zr0.4,Ti0.6)O3/La0.5Sr0.5CoO3/Ti-Al/Si(LSCO/PZT/LSCO/Ti-Al/Si)异质结,研究了550℃常规退火(CTA)和快速退火(RTA)工艺对LSCO/PZT/LSCO/Ti-Al/Si结构和性能的影响。实验发现非晶Ti-Al薄膜在经过不同退火工艺后仍具有非晶结构,快速退火6min的样品具有较好的物理性能。在418kV/cm的外加电场下,LSCO/PZT/LSCO电容器的剩余极化强度和矫顽电场强度分别为22μC/cm2和83kV/cm。LSCO/PZT/LSCO电容器的漏电行为不依赖于退火工艺,当电场强度低于46.7kV/cm时为欧姆导电,高于46.7kV/cm时为肖特基导电机制。 La0.5Sr0.5CoO3/Pb（Zr0.4,Ti0.6）O3/La0.5Sr0.5CoO3/Ti-Al/Si （LSCO/PZT/LSCO/Ti-Al/Si） heterostructure was fabricated on Si substrate by RF magnetron sputtering and sol-gel methods,using amorphous Ti-Al films as barrier layer.The effect of annealing conditions （550 ℃ using conventional thermal annealing （CTA） and rapid thermal annealing （RTA）） on the structural and physical properties of Si-based Pb（Zr0.4,Ti0.6）O3 ferroelectric capacitors were investigated.It is found that amorphous Ti-Al film is still amorphous after high temperature annealing,and RTA for 6 min can yield the best physical results for the LSCO/PZT/LSCO capacitor,whose remnant polarization and coercive electric field are 22 μC/cm2 and 83 kV/cm,respectively.Moreover,it is also found that leakage mechanism of LSCO/PZT/LSCO capacitor does not depend on the annealing conditions.It is Ohmic conduction at applied fields smaller than 46.7 kV/cm,and Schottky conduction at fields higher than 46.7 kV/cm.
作者 郭颖楠 刘保亭 赵敬伟 王宽冒 王玉强 孙杰 陈剑辉
机构地区 河北大学物理科学与技术学院 河北大学电子信息工程学院
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第1期62-66,71,共6页 Journal of Synthetic Crystals
基金 国家自然科学基金(No.60876055) 河北省自然科学基金(E2008000620 E2009000207) 教育部科学技术研究重点项目(No.207013) 河北省应用基础研究计划重点基础研究项目(08965124D)
关键词 退火工艺 PZT 磁控溅射法 溶胶-凝胶法 annealing conditions PZT magnetron sputtering sol-gel method
分类号 O484 [理学—固体物理]
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参考文献21

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同被引文献31

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人工晶体学报
2010年 第1期

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