基于数值模拟的CZSi单晶收尾控制参数研究

Study on the Tail Growth Control Parameters of Czochralski Silicon Based on the Numerical Simulation

采用理论分析和有限元数值模拟相结合的方法研究了晶体收尾过程中的温度分布与热量传递。解释了"倒草帽"形收尾(收尾前段晶体直径猛然收缩)的成因,指出了改进收尾形状的方法,研究结果对于合理设定直拉硅单晶收尾工艺参数具有一定的参考意义。通过对比试验,仿真计算结果与单晶炉实验测试结果相吻合。

Theoretical analysis and finite element numerical simulations were presented to study temperature distribution and heat transmission in the process of tail growth,in which ＂ inverted hat＂（crystal diameter suddenly shrinking at the beginning of tail growth） forming is explained and the way to improve the tail shape is mentioned.The results have certain significance in reasonably setting technological parameter of the ending of Czochralski silicon.By comparison,simulation results coincide with crystal furnace test results.