电子封装用SiC_p/铝基复合材料的触变性能

Thixotropic Properties of SiC_p/Al Alloy Matrix Composites for Electronic Package

采用Gleeble-1500热模拟机,研究了半固态SiCp/铝基复合材料在不同触变温度和变形速率下的触变性能和组织特征。结果表明,随着应变的增加,复合材料应力首先快速增加,然后快速减小,最后又有缓慢增加的趋势。此外,随着变形温度降低或变形速率升高,复合材料的半固态压缩变形应力均增加。经过压缩变形后,自由变形区比大变形区分布有更多的SiCp,含量达到55%(体积分数)左右,且平均尺寸小于20μm。细SiCp在压缩变形后主要集中于自由变形区,这表明通过半固态触变成形产生的液固相分离可产生高SiCp区域,从而符合电子封装材料的要求。

Thixo-compression behavior and microstructure of SiCp/Al alloy matrix composites were investigated with the help of Gleeble-1500 thermal-mechanical simulator under different deformation temperatures and different deformation rates.It is found that,with increasing in strain,compressive stress of the composites is firstly increased rapidly,then decreased rapidly,and at last increased slowly.In addition,with decreasing in deformation temperature or increasing in deformation rates,compressive stress is increased in semi-solid composites.After compressive deformation,more small SiC particles with average size less than 20μm and approximately 55% in volumetric fraction are mainly not distributed in severe deformation zone but in free deformation zone,which shows that high SiC zone can be created from separation of liquid-solid phase by semi-solid thixo-compression,meeting the requirements of electronic package materials.