摘要
采用ECR等离子体辅助技术,融合化学气相沉积法,在450℃的相对低温条件下于Si(100)衬底上生长出GaN薄膜。对样品进行了XRD、FT-IR和AFM表征,并在制备过程中采集到反应室中N2-(CH3)3Ga等离子体的发射光谱。结果表明,所制备的多晶体GaN薄膜是由N2-(CH3)3Ga等离子体中的活性成分通过复杂的反应生成的,其生长过程符合岛状生长机制。
Using the electron cyclotron resonance plasma technology and chemical vapor deposition method, the GaN films are grown on Si(100) substrates under a relatively low temperature of 450℃. The samples are characterized by XRD,FT-IR and AFM, the optical emission spectrum of N2-(CH3 )3Ga plasma in the chamber is gathered during the preparation. The results indicate that the multicrystal GaN films are grown through complicated reactions of active ingredients in the N2-(CH3 )3 Ga plasma, and the growth process corresponds with the island growth mechnism.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第6期86-88,94,共4页
Materials Reports
基金
国家自然科学基金资助项目(10575039)
广东省重点攻关资助项目(ZKM01401G)