等离子体辅助有机金属(CH_3)_3Ga化学气相沉积GaN薄膜

ECR Plasma Assisting Organic Metal (CH_3)_3Ga with the Chemical Vapor Deposition of GaN Film

采用ECR等离子体辅助技术,融合化学气相沉积法,在450℃的相对低温条件下于Si(100)衬底上生长出GaN薄膜。对样品进行了XRD、FT-IR和AFM表征,并在制备过程中采集到反应室中N2-(CH3)3Ga等离子体的发射光谱。结果表明,所制备的多晶体GaN薄膜是由N2-(CH3)3Ga等离子体中的活性成分通过复杂的反应生成的,其生长过程符合岛状生长机制。

Using the electron cyclotron resonance plasma technology and chemical vapor deposition method, the GaN films are grown on Si（100） substrates under a relatively low temperature of 450℃. The samples are characterized by XRD,FT-IR and AFM, the optical emission spectrum of N2-（CH3 ）3Ga plasma in the chamber is gathered during the preparation. The results indicate that the multicrystal GaN films are grown through complicated reactions of active ingredients in the N2-（CH3 ）3 Ga plasma, and the growth process corresponds with the island growth mechnism.