偏压对GLC镀层的结构及应力的影响研究

Effects of Bias Voltage on Microstructure and Stress of GLC Films

采用磁控溅射离子镀技术制备了类石墨镀层(GLC),利用扫描电子显微镜(SEM)测量了镀层的厚度、X射线衍射仪(XRD)研究了材料的物相和应力,并结合透射电子显微镜(TEM)观察和分析了材料的组织结构。研究结果表明:不同偏压下得到的镀层结构相同,均为非晶为主的类石墨镀层,并且随着偏压增大,膜厚逐渐减小;在所研究的偏压下,应力变化规律是随着偏压的增加,样品与基体的复合应力先增大,后减小,其中-65V时达到最大值。

The GLC（Graphite Like Carbon） films were synthesized by the magnetron sputtering ion plating tech nology. The thickness of the films was measured by scanning electron microscopy （SEM）, the microstructure and stress of the films were determined by X-ray diffraction （XRD）and transmission electron microscope （TEM）, respectively. The results indicate that amorphous GLC films are obtained with the different bias voltage, and as the bias voltage increasing, the film thickness gradually decreases. At the same time, in the given the bias voltage, the stress value of the film first increases and then decreases along with the bias voltage increasing, which reaches the maximum value when the bias voltage value up to -65V.