100μm大晶粒多晶硅薄膜的铝诱导法制备

Preparation of polycrystalline silicon of 100μm size large grain thin films by metal induced crystallization

以Corning Eagle 2000玻璃为衬底,用磁控溅射法制备了glass/a-Si/Si O2/Al叠层结构,于Ar气保护下退火,制备了具有很强的(111)择优取向,最大晶粒尺寸达100μm的铝诱导晶化多晶硅薄膜。研究结果表明,非晶硅的氧化时间越长,所制备的多晶硅晶粒尺寸越大,当氧化时间达约47h后,再延长氧化时间对薄膜性能的影响不明显。还发现退火温度越高,晶粒越小,但是反应速率越快。

Corning glass/a-Si/SiO2/Al structures were prepared by magnetron-sputtering and were annealed in Ar atmosphere.And high quality polycrystalline film with grain diameter ranging from 10-100μm was achieved by aluminum-induced crystallization（AlC）.And the polycrystalline showed a strong（111） orientation.It was found that oxide played an important part in the crystallization process.The longer the amorphous silicon was oxidized,the bigger was the grain size.Prolonging oxidation time to more than 47h will not continually enhance the effects apparently.Crystallization proceeded slower under lower annealing temperature,while the grain size became bigger.