摘要
A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.
A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60536030, 60776024, 60877035 and 90820002, the National High-Technology Research and Development Program of China under Grant Nos 2007AA04Z329 and 2007AA04Z254.
