摘要
Epitaxial channel metal-oxide semiconductor field-effect transistors （MOSFETs） have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.
Epitaxial channel metal-oxide semiconductor field-effect transistors （MOSFETs） have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.
基金
Project supported by the National Natural Science Foundation of China (Grant No. 60876061)
Advanced Research Foundation(Grant No. 51308040302)
