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超大规模集成电路用新型散热材料的优化设计

Optimization Designing of New Thermal Materials Used for VLSI
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摘要 利用趋势带法和定向位移法对多元合金成分进行优化设计对In—Bi—Sn三元系和In—Bi—Sn—Ga四元系部分区域进行了研究,获得了熔点为52℃,且不含铅、镉、汞等有毒有害元素的In60.5Bi27Sn8.5Ga4四元新型散热材料。该合金在40℃温度附近的导热系数达到24.57 W.m-1.K-1,是现有高导热硅胶(导热系数1.5~2.5 W.m-1.K-1)的十余倍,表现了良好的导热性能。本研究成分优化设计方法对研究合金熔点与成分关系具有一定指导意义。 The methods of trends and directional displacement was used to optimize the design of the multi-alloy composition and to study some districts of the In-Bi-Sn ternary system and In-Bi-Sn-Ga quaternary ,which obtains In60.5Bi27SnS.SGa4 new quaternary materials for thermal with the melting point of 52℃ and without lead, cadmium, mercury and other toxic and harmful elements. The thermal conductivity coefficient of the alloy is up to 24.57 Wm^-1.K^-1 at the temperature of about 40℃,which is more than ten times as an existing high thermal conductivity that of silicone (1.5 - 2.5 W.m^-1.K-1), and it has a good thermal conductivity performance. The method of optimal design of components in this study has a certain guide significance to research the relationship between melting point and composition of alloys.
出处 《四川有色金属》 2009年第4期28-31,共4页 Sichuan Nonferrous Metals
关键词 高导热 低熔点 超大规模集成电路 In—Bi—Sn In—Bi-Sn—Ga High thermal conductivity Low melting point VLSI In-Bi-Sn In-Bi-Sn-Ga
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参考文献5

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二级参考文献3

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