摘要
本文将慢正电子湮灭多普勒展宽谱技术,应用于对SiC表面热氧化生长的SiO_2特性的研究.S参数和W参数在退火前后的变化,直观的反映出SiO_2/SiC表面氧化层中空位型缺陷浓度的改变.通过与SiO_2/Si样品的对比,证实C元素及其诱生空位型缺陷的存在,很可能是影响SiO_2/SiC氧化层质量和SiC MOS击穿特性的重要因素,后退火工艺可以提高SiO_2/SiC中氧化层的致密性.实验表明,慢正电子湮灭多普勒展宽谱是研究热氧化SiO_2特性的有效手段.
In this article, positron annihilation Doppler-spread-spectroscopy was used to study the SiO2 film by thermal oxidation on 6H-SiC. The change of both S parameter and W parameter before and after annealing could show the void-like defects in SiO2 on SiC. Compared with SiO2/Si, the existence of carbon atoms and void-like defects in SiO2 might be the reasons of low breakdown voltage of SiO2/SiC MOS structure. The experiments indicated that, post-annealing processing could improve the quality of the SiO2 layer. It was also indicated that positron annihilation Doppler-spread-spectroscopy was very useful to study the SiO2 film by thermal oxidation.
出处
《四川大学学报(自然科学版)》
CAS
CSCD
北大核心
2010年第2期331-334,共4页
Journal of Sichuan University(Natural Science Edition)