磁控溅射制备纳米二氧化钒半导体薄膜及表征

Preparation and properties of VO_2 semiconductor nanofilms by R.F. magnetron sputtering

本文采用射频磁控溅射法,结合氩气气氛退火工艺制备了VO2薄膜。通过优化磁控溅射和热退火工艺,结合激光拉曼光谱仪(Raman)、X射线光电子能谱(XPS)、电镜扫描(SEM)对薄膜的相结构、组分和表面形貌进行分析。结果表明:溅射衬底温度为150℃,在450℃氩气气氛退火2.5 h能制备出高质量的VO2薄膜,表面呈米粒状,有一定的取向性。

VO： thin films were prepared by RF magnetron sputtering and annealed in argon atmosphere. The phase structure, components and surface morphology of vanadium oxides nanofilms were characterized by laser Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and scanning electron microscope （SEM）. The results showed that the high-quality VO2 nanofilms are available if the substrate temperature is 150℃ and the films are annealed at 450℃ in argon atmosphere for 2.5hr, and that the films present granular structure with orientation texture to a certain extent.