摘要
采用射频磁控溅射方法在不同形貌的Mo电极上制备了(002)择优取向的AlN薄膜。采用XRD、FESEM表征了Mo电极及AlN薄膜的结构、表面形貌及择优取向。结果表明,Mo电极的形貌影响AlN薄膜的择优取向生长,在较高溅射气压下沉积的Mo电极晶粒细小、分布均匀,有助于AlN薄膜(002)择优取向生长。
Mo electrode and (002) -oriented AlN films were deposited by reactive magnetron sputtering under various sputtering pressures. The films were characterized by X - ray diffraction (XRD) , atomic force microscopy (AFM) and field - emission scanning electron microscopy (FESEM). It was found that the orientation of AlN films was influenced by the morphologies of Mo electrodes. The AtN films deposited on Mo electrode performs as fine grains exhibits highly (002) orientation.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2010年第2期183-186,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金(编号:50872031)