摘要
采用溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO2/Si衬底上制备Bi3.15Nd0.85Ti3O12薄膜,发现制备的薄膜具有单一的钙钛矿晶格结构,且表面平整致密。对Bi3.15Nd0.85Ti3O12薄膜的电学性能进行了研究。结果表明,室温下,在测试频率1 MHz时,其介电常数为213,介电损耗为0.085;在测试电压为350 kV/cm,其剩余极化值、矫顽场强分别为39.1μC/cm21、60.5 kV/cm;表现出良好的抗疲劳特性和绝缘性能。
The Bi3.15 Nd0.85 Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates by using Sol-Gel method. The thin films showed a perovskite phase and dense microstructure. The electric performance of Bi3.15 Nd0.85 Ti3O12 thin film was studied. The result showed that he dielectric constant and the dissipation factor were a- bout 213 and 0. 085 at 1 MHz at room temperature, respectively. The remnant polarizations （2Pr） and coercive field （2c~） of the Bi3.15 Nd0.85 Ti3O12 thin films were 39.1 μ/cm2 and 1601 5 kV/cm, respectively, under an applied field of 350 kV/cm. Also, the films showed fatigue-free and good insulating behavior.
出处
《压电与声光》
CSCD
北大核心
2010年第2期274-276,共3页
Piezoelectrics & Acoustooptics
基金
湖北省自然科学基金资助项目(2007ABA309)
