摘要
运用数字锁相技术研究了Pb(Zr,Ti)O3(PZT)铁电薄膜的介电性能测试技术,随着薄膜微图形化尺寸的缩小,电路寄生参数的影响将逐渐变大并成为主导因素,从而严重影响薄膜介电性能测试的准确性。通过补偿方法,消除了电路寄生参数的影响,准确测量了薄膜的介电常数。通过对溶胶-凝胶制备的PZT薄膜样品的介电性能测试表明,上述补偿法可满足PZT铁电薄膜制备技术及微机电系统中器件设计对PZT微图形性能测试的要求。
The digital lock-in technique was used to measure the dielectric properties of micro-sized Pb（Zr, Ti）O3 （PZT） thin film. However, the parasitic effects of all parameters of the circuit greatly affected the measurement results. This paper measured the true dielectric properties of PZT thin film using the compensation method which eliminated the parasitic influence. Experiments were performed on Sol-Gel derived PZT thin film, and the results indicated that the compensation method was suitable for the dielectric measurement on micro-sized PZT thin film.
出处
《压电与声光》
CSCD
北大核心
2010年第2期293-296,共4页
Piezoelectrics & Acoustooptics
基金
教育部博士点基金资助项目(20030358018)
优秀青年教师计划基金资助项目
