摘要
利用中频磁控反应溅射技术在玻璃衬底上制备氮化铝(AlN)薄膜,并经退火处理。利用X-衍射和原子力显微镜分析了AlN薄膜的结构及表面形貌。结果表明,衬底温度和退火工艺对AlN薄膜的结构和表面形貌有重要影响。研究表明,衬底温度为230℃时,AlN薄膜的表面粗糙度最小,退火能减小AlN薄膜表面粗糙度。
AIN thin films were deposited on glass substrate by intermediate frequency impulse magnetron reac- tive sputtering method and processed by annealing. The preparation of the samples was studied by X-ray diffraction (XRD). The surface morphology of the as-deposited sample was studied by atom force microscopy (AFM). The result showed that the substrate temperature and the annealing had important effect on preparation and surface to- pography of A1N thin films. It was also found that the surface roughness of AIN thin films was the smallest when the substrate temperature was 230 ℃. The annealing could reduce surface roughness of AIN thin films.
出处
《压电与声光》
CSCD
北大核心
2010年第2期311-313,共3页
Piezoelectrics & Acoustooptics
关键词
玻璃衬底
衬底温度
氮化铝薄膜
退火
glass substrate
substrate temperature
aluminum nitride thin films
annealing