期刊文献+

玻璃衬底制备AlN薄膜结构的研究 被引量:2

Study on Preparation of AlN Thin Films on the Glass Substrate
下载PDF
导出
摘要 利用中频磁控反应溅射技术在玻璃衬底上制备氮化铝(AlN)薄膜,并经退火处理。利用X-衍射和原子力显微镜分析了AlN薄膜的结构及表面形貌。结果表明,衬底温度和退火工艺对AlN薄膜的结构和表面形貌有重要影响。研究表明,衬底温度为230℃时,AlN薄膜的表面粗糙度最小,退火能减小AlN薄膜表面粗糙度。 AIN thin films were deposited on glass substrate by intermediate frequency impulse magnetron reac- tive sputtering method and processed by annealing. The preparation of the samples was studied by X-ray diffraction (XRD). The surface morphology of the as-deposited sample was studied by atom force microscopy (AFM). The result showed that the substrate temperature and the annealing had important effect on preparation and surface to- pography of A1N thin films. It was also found that the surface roughness of AIN thin films was the smallest when the substrate temperature was 230 ℃. The annealing could reduce surface roughness of AIN thin films.
出处 《压电与声光》 CSCD 北大核心 2010年第2期311-313,共3页 Piezoelectrics & Acoustooptics
关键词 玻璃衬底 衬底温度 氮化铝薄膜 退火 glass substrate substrate temperature aluminum nitride thin films annealing
  • 相关文献

参考文献14

二级参考文献25

  • 1团体著者,华中理工大学学报,1998年,25卷,9期,29页
  • 2刘国璞,大学化学,1986年,83页
  • 3Kumar A,Thin Solid Films,1997年,308/309卷,406页
  • 4Vispute R D,Appl Phys Lett,1995年,67卷,4724页
  • 5许小红,应用化学,2000年,17卷,3期,367页
  • 6Jagannadham K,J Vac Sci Technol A,1998年,18卷,5期,2804页
  • 7Liufu D,J Vac Sci Technol A,1998年,16卷,4期,2360页
  • 8Ishihara M,Thin Solid Films,1998年,316卷,152页
  • 9Miao X S,Thin Solid Films,1998年,315卷,123页
  • 10Kuo P K,Thin Solid Films,1994年,253卷,223页

共引文献30

同被引文献26

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部