离子注入微生物的生物效应研究

A study of biological effects on microbe induced by ion implantation

用４０ｋｅＶ、６０ｋｅＶ的Ｎ＋离子束对红霉素产生菌进行了离子注入，发现菌株存活率随注入剂量的增加呈指数衰减，并拟合了存活率—剂量公式。扫描电镜观察发现离子注入导致了红霉产生菌孢子的表面损伤。用１００ｋｅＶＡｓ＋注入大肠埃希氏菌和枯草芽孢杆菌，对注入离子在其体内分布进行了Ｒｕｔｈｅｒｆｏｒｄ背散射测量和理论估算。

The spores of Streptomyces erythreus were implanted by nitrogen ions with the energy of 40 to 60 keV. The survival rate decayed exponentially with the increasing of ion implantation dose. The relationship between survival rate and dose was formulated by imitation in computer. Scanning electron microscope (SEM) photographs of spores implanted by nitrogen ions showed that there were holes and crevices on the surface. The cells of E.coli and Bacillus subtilis were implanted by arsenic ions with the energy of 100 keV. The distributions of implanted ions in cells were measured by Rutherford backscattering spectrometry and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.