摘要
通过X射线衍射、扫描电镜、压汞议、立体显微镜等检测手段，对Si3N4(Si2ON2)结合SiC质棚板的显微结构进行了剖析，揭示了显微结构对SiC质棚板宏观性能的影响。认为结合相的抗氧化性及氧化“釉层”的稳定性是决定棚权使用寿命的关键；气孔结构及分布是影响Si3N4(Si2ON2)结合棚极热震稳定性的重要因素。
The microstrUcture of Si3 N4 (Si2 ON2 )bonded SiC deck has been investigated by means of X ray diffraction, SEM, pressrerporosimeter and solid microscope. The effect of microstructure on the properties of Si3 N4 (Si2ON2 ) bonded SiC deck has been revealed. It is considered that the oxidition resistance of the bonding phases and the stability of the oxide coating are the main factors which iafluence the deck's life. Structure and distribution of the pores are the important factors impacting thermal shock resistance of Si3 N4 (Si2ON2) bonded SiC deck.
出处
《耐火材料》
CAS
北大核心
1998年第6期309-312,共4页
Refractories
基金
建材行业基金
关键词
氮化硅
碳化硅
棚板
显微结构
氧化
陶瓷
窑具
Silicon nitride, Silicon carbide, Deck, Microstructure, Oxidation
