电化学脉冲腐蚀制备多孔硅微腔技术

Porous Silcon Mirocavities Prepared by a Pulsed Electrochemical Etching Method

基于电化学脉冲腐蚀方法,用正交实验法给出了制备多孔硅微腔较为理想的制备参数:脉冲周期为5 ms,占空比为5/10和上下各6个周期的Bragg镜面层,得到了半峰宽为6 nm的窄峰发射的多孔硅微腔.并用了以HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行了解释,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中,不但要考虑到HF酸对硅的纵向腐蚀(电流腐蚀),也要考虑到HF酸对多孔硅硅柱的横向腐蚀(浸泡腐蚀).

The porous silicon mirocavities have been prepared by a pulsed electrochemical etching method. The orthogonal experimental method has been adopted to optimize the experimental conditions for fabrication of porous silicon mirocavities. Under the optimal condition, the full width at half maximum of the light emission peak is reduced to be 6 nm. A dynamic etching model based on diffusion of Hfacid explains the experimental results well. It indicates that the narrow emission peak of porous silicon mirocavities prepared by the pulsed electrochemical etching method can be attributed not only to longitudinal etching, but also to transverse etching（soaking etching ） of HF.