不同初始取向铜单晶制备技术的研究

Study on the Preparation of Copper Single Crystal with Different Initial Orientations

为了获得制备确定初始取向铜单晶的最优工艺参数,采用不同的抽拉速度、坩埚材料以及单晶体生长通道参数值制备出铜单晶体试棒.并应用TEM,XRD衍射分析对其进行取向标定.结果表明:采用高纯石墨坩埚,单晶体生长通道直径为2 mm,在(1 450±5)℃下保温2 h,运动距离在30 mm以下时抽拉速度为2μm/s,运动距离超过30 mm时抽拉速度为8μm/s,所制备出的铜单晶体表面光洁均匀,且试棒的初始取向的偏差与设计值在3°以内.

In order to obtain the fixed parameters of set-oriented copper single crystal preparation, the effects of different solidification speed, crucible materials and crystal growth corridor on the sample initial orientation have been systemically studied by use of XRD and TEM analysis. The results show that using high-purity graphite crucible, crystal growth corridor diameter of 2 mm, maintaining temperature of （1 450±5）℃ for 2 h,drawing speed of 2 μm in movement distance below 30 mm and drawing speed of 8 μm in moving distance more than 30 mm, the samples with uniform and smooth surface can be achieved and the orientation difference between prepared samples and designed orientation is less than 3°.