摘要
采用振幅掩模穿过部分空间非相干光的方法产生一暗迹,将暗迹成像在晶体前表面,得到入射暗迹半高宽为16.75μm,入射光功率为400μW.基于LiNbO3:Fe晶体的强光伏效应,在无背景光辐照时,在晶体内写入一对部分空间非相干Y结暗光伏孤子.实验结果表明:在无背景光辐射时可以在LiNbO3:Fe晶体内写入部分空间非相干Y结孤子.
A dark notch is generated by using an amplitude mark to cross partially spatially incoherent light beam. The notch is imaged onto the input face of the crystal. The full width at half maximum of notch is 16.75 μm. Power of input beam is 400μW. Based on the bulk photovoltaic effect,a pair of Y-junction dark photovoltaic solitons is written with partially spatially incoherent light beam when the background illumination is absent. The experimental result demonstrates that Y-junction dark photovoltaic solitons can be written in LiNbO3 .Fe crystal without background illumination.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2010年第4期626-629,共4页
Acta Photonica Sinica
关键词
空间光孤子
振幅掩模
部分空间非相干
Y结孤子
Optical spatial solitons
Amplitude mark
Partially spatial incoherence
Y-junction solitons