静电感应晶体管(SIT)电性能的控制

Control of the Electrical Performance of the Static Induction Transistor (SIT)

静电感应晶体管（SIT）的I－V特性（包括类三极管、类五极管以及三一五极管的混合特性）与器件的结构密切相关．沟道长度lc、沟道宽度dc、比值lc／dc以及沟道掺杂浓度ND等均为确定SIT运用方式的重要参数．如何控制这些参数并达到最佳匹配进而实现优良的I－V特性，是个关键而且困难的问题．本文给出了上述参数控制的一般原则、方法，还给出了控制的判据，引人了一个控制因子β，特别是对混合特性的控制问题进行了详细的讨论．由于混合特性低的通态电阻和高的AC功率效率，它更为适于低阻负载直接驱动电路．

A general control principle and method, control criteria and control factor on the fabrication parameters of the SIT have been given. Although these results are with certain approximation, they will be very useful and convenient for designing and fabrication of devices, in especial, of the SIT with mixedcharacteristic. Furthermore, we need to point out that the control principle and method, as mentioned above, on the fabrication parameters of the SIT are applied the to others static induction devices including SIT、BSIT and SITH[4. 5].