摘要
采用HFCVD生长法,以较低生长温度,在Si(111)衬底上淀积3C-SiC(111)薄层。用XRD、VASE、XPS等分析手段研究了薄层的结构、光学常数、组分及化学键等性能。XRD显示薄层具有明显的择优取向特征。VASE测量出薄层的折射率为2.686,光学常数随深度的变化曲线反映出薄层的多层结构。XPS深度剖面曲线表明薄层中Si/C原子比符合SiC的理想化学计量比,其能谱证明C1s与Si2p成键形成具有闪锌矿结构的3C-SiC。
Polycrystalline 3C SiC films are deposited on Si(111) substrate using H 2+SiH 4+CH 4 by HFCVD method at the lower temperature. Such characteristics of the films as the structures, optical constant, components and chemical bonds are studied by X ray diffraction(XRD), variable angle spectroscopic ellipsometry(VASE) and X ray photoelectron spectroscopy(XPS), etc. XRD displays the films characterized by the obvious preferred orientation. The refractive index of the films determined by VASE is 2.686. The film polylaminate structure is reflected with the varying curves in the depth of optical constants. XPS depth profile curves indicate that Si/C atomic ratio in the film is in coincidence with the ideal stoichiometric ratio, whose energy specscope proves that C 1s and Si 2p in bond forms are of crystal 3C SiC structure.
出处
《西安理工大学学报》
CAS
1998年第4期331-331,334,共2页
Journal of Xi'an University of Technology
基金
国家自然科学基金