高输入阻抗达林顿晶体管的优化设计

An Optimum Design for High Input Impendence Darlington Transistor

提出了ＶＤＭＯＳ和双极晶体管复合而成的达林顿功率晶体管结构和工艺参数的优化设计方法，建立了设计模型。经验证设计结果和实验结果基本吻合。该研究对开发此类器件具有参考价值。

This paper introduces an optimum design method for Darlington power transistor structure consisting of VDMOS and bipolar transistor and technological parameters. Also, the design model is established. The design results are found to be basically in agreement with experimental results. This research is of reference value for the development of these electric devices.