摘要
The transient photoresponse of a backside-illuminated InP/InGaAs uni-traveling carrier photodetector(UTC-PD) is simulated by a 2D drift-diffusion approach utilizing a commercial numerical device simulator(ATLAS).The effects of the epitaxial layer structure and device biasing are taken into account.The simulation results indicate that the absorption region has a critical effect on the photoresponse pulse,and an optimized epitaxial layer structure is given to achieve a fast response while maintaining a reasonable response.Here,the optimized material parameters of the absorption region are 180 nm and 5 × 1016 cm-3,respectively.
The transient photoresponse of a backside-illuminated InP/InGaAs uni-traveling carrier photodetector（UTC-PD） is simulated by a 2D drift-diffusion approach utilizing a commercial numerical device simulator（ATLAS）.The effects of the epitaxial layer structure and device biasing are taken into account.The simulation results indicate that the absorption region has a critical effect on the photoresponse pulse,and an optimized epitaxial layer structure is given to achieve a fast response while maintaining a reasonable response.Here,the optimized material parameters of the absorption region are 180 nm and 5 × 1016 cm-3,respectively.
基金
supported by the National Natural Science Foundation of China (No.60736035)
the Youth Foundation of Tianjin University(No.TJU-YFF-08B64)
