摘要
介绍了电子回旋共振低温等离子体化学气相沉积氮化镓薄膜工艺,并以高纯氮气N2和三甲基镓(TMG)为反应气源,在T=450℃条件下,在α-Al2O3(0001)面上低温生长了GaN薄膜。X射线分析显示GaN薄膜的(0002)峰位置为2θ=34.75°,半峰宽为18′。这一结果说明了ECR—PECVD法具有在低温下生长GaN薄膜的优势。
The electron cyclotron resonance plasma enhanced vapor deposition technology is adopted to grow GaN films on （0001） α-Al2O3substrate at T=450℃. The gas sources are pure N2 and trimethylgallium （TMG）. X-ray diffraction analysis of GaN thin film showed that the peak of GaN （0002） at 2θ = 34.752° had a fine 18′ of FWHM. The results demonstrate ECR--PECVD technology is favorable for depositing GaN films at low temperatures.
出处
《科学技术与工程》
2010年第12期2829-2830,2835,共3页
Science Technology and Engineering
基金
国家自然科学基金项目[10575039]资助
