期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

应用于WLAN的高效率F类功率放大器 被引量：4

High efficiency class-F power amplifier for WLAN applications
下载PDF
导出
摘要 为了提高在高速率信号传输下无线通讯发射系统中功率放大器的工作效率,提出了一种结构新颖的高效率F类功率放大器.通过计算机仿真与实验板调试相结合的方法确定了放大器的最佳漏极阻抗,根据F类放大器漏极电压和漏极电流是相位差为λ/4的方波和半正弦波的特性,通过仿真软件设计和优化,设计出的谐波滤波网络在输出谐波频点有良好的滤波性能.为了降低栅源电容对输入信号造成的失真,在输入端口加入短截线,提高了放大器的漏极效率.通过测试,功率放大器工作在2.4GHz时,在2dB增益压缩点的功率附加效率为67%,输出功率为30dBm.测试结果表明,该高效率功率放大器适合应用于WLAN无线通讯发射系统. A novel class-F power amplifier is designed for high-speed radio frequency（RF） transmitters to increase the efficiency of wireless communication systems.A method combining computer simulation with experiment test is used in decision of the optimal drain impedance of the transistor.For class-F power amplifier,the waveforms of drain voltage and drain current are square and half-sinusoidal respectively with a phase difference of λ/4.According to the characteristics,using Agilent advanced design system（ADS）,simulation is performed to design harmonic filter circuit.The simulation results show that the filter circuit has a good performance at the frequency of the second and third harmonics.A stub paralleled with the gate is applied to avoid nonlinear distortion at the input port due to gate-source capacitance.The experimental results show that the amplifier works at 2.4GHz with the power-added efficiency of 67% and the output power of 30dBm.Comparison and analysis show that the presented power amplifier provides a good performance and is excellently suitable for wireless local area network（WLAN） applications.
作者 晋石磊 周健义 刘星海 张雷
机构地区 东南大学毫米波国家重点实验室
出处 《东南大学学报（自然科学版）》 EI CAS CSCD 北大核心 2010年第2期235-238,共4页 Journal of Southeast University：Natural Science Edition
基金 国家自然科学基金资助项目(60621002 60702027) 国家高技术研究发展计划(863计划)资助项目(2008AA01Z223 2009AA011503)
关键词 F类功率放大器 功率附加效率 WLAN发射系统 class-F power amplifier power-added efficiency transmit system for wireless local area network applications
分类号 TN722 [电子电信—电路与系统]
  • 相关文献

参考文献10

  • 1Grebennikov A.RF and microwave power amplifier design[M].New York:McGraw-Hill,2005.
  • 2Kazimierczuk M K.RF power amplifiers[M].Chichester,West Sussex,UK:Wiley,2008.
  • 3Cripps S C.Advanced techniques in RF power amplifier design[M].Boston:Artech House,2002.
  • 4Raab F H.Class-F power amplifiers with maximally flat waveforms[J].IEEE Trans Microwave Theory Tech,1997,45(11):2007-2012.
  • 5Zhe H M,Bin A K,Kordesch A V.An integrated 2.4GHz CMOS class F power amplifier[C]//Proceedings of IEEE International Conference on Semiconductor Electronics.Kuala Lumpur,Malaysia,2006:537-540.
  • 6Schmelzer D,Long S I.A GaN HEMT class F amplifier at 2GHz with》 80% PAE[J].Digital Object Identifier,2007,42(10):2130-2136.
  • 7Colantonio P,Giannini F,Giofre R,et al.A two stage high frequency class F power amplifier integrated nonlinear microwave and millimeter-wave circuits[C]//2006 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits.Aveiro,Portugal,2006:187-190.
  • 8Schmelzer D,Long S I.A GaN HEMT class F amplifier at 2 GHz with》 80 % PAE[C]// IEEE Compound Semiconductor Integrated Circuit Symposium.San Antonio,TX,USA,2006:96-99.
  • 9White P.Effect of input harmonic terminations on high efficiency class-B and class-F operation of PHEMT devices[C]//IEEE MTT-S International Microwave Symposium Digest.Baltimore,MD,USA,1998,3:1611-1614.
  • 10Ouyahia A,Duperrier C,Tolant C,et al.A 71.9% power-added-efficiency inverse class-F LDMOS[C]//IEEE MTT-S International Microwave Symposium Digest.San Francisco,CA,USA,2006:1542-1545.

同被引文献19

  • 1彭艳军,宋家友,王志功.HBT MMIC功率放大器的自适应线性化偏置技术[J].中国集成电路,2006,15(11):32-37. 被引量：12
  • 2Cripps Steve C. RF Power Amplifiers for Wireless Com- munications 2nd ed. [ M ]. Norwood: Artech House, 2OO6.
  • 3You Fei, He Songbai, Tang Xiaohong, et al. Perform- ance study of a class E power amplifier with tunable seri- M-parallel resonator network [ J ]. IEEE Transactions on Microwave Theory and Techniques, 2008, 56 ( 10 ) : 2190-220O.
  • 4Young Yun Woo, Youngoo Yang, Bumman Kim. Analy- sis and experiments for high-efficiency class-F and inverse class-F power amplifiers [ J ]. IEEE Transactions on Mi- crowave Theory and Techniques, 2006, 54 ( 5 ) : 1969- 1974.
  • 5Ouyahia A, Duperrier C, Tolant C, et al. A 71.9% Power-added-efficiency Inverse Class-F LDMOS [ A ]. IEEE Microwave Symposium Digest [ C]. 2006. 1542- 1545.
  • 6Sheikh A, Roff C, Benedikt J, et al. Peak class F andinverse class F drain efficiencies using Si LDMOS in a limited bandwidth design[ J]. IEEE Microwave and Wire- less Components Letters, 2009, 19(7) :473-475.
  • 7Stameroff A N, Fham A V, Leoni R E. High efficiency push-pull inverse class F power amplifier using a balun and harmonic trap waveform shaping network [ A ]. IEEE Microwave Symposium Digest[ C]. 2010. 521-524.
  • 8Angelov I, Bengtsson L, Garcia M. Extensions of the chalmers nonlinear HEMT and MESFET model [ J ]. IEEE Transactions on Microwave Theory and Tech- niques, 1996, 44(10): 1664-1674.
  • 9Kuroda K, Ishikawa R, Honjo K. Parasitic compensation design technique for a C-band GaN HEMT class-F ampli: tier[ J ]. IEEE Transactions on Microwave Theory and Techniques, 2010, 58( 11 ) :2741-2750.
  • 10Garcia-Osorio A, Loo-Yau J R, Reynoso-Hernandez J A A. GaN class-F PA with 600MHz bandwidth and 62. 5% of PAE suitable for WiMAX frequencies[J]. IEEE International Microwave Workshop Series on, 2010(2) : 1-4.

引证文献4

二级引证文献19

东南大学学报（自然科学版）
2010年 第2期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部