摘要
The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated.The resistivity of Si was 0.1Ω·cm.ZnO films annealed at 500℃ were of the best quality.To investigate the spectral response of the photodiodes,the J-V characteristics were measured under different monochromatic lights at wavelength 420,530,570 and 630 nm.The diodes exhibit strong responsivity in the blue region at 420 nm.The responsivity is 0.22 A/W for Al doped （0.8 wt pct） photodiode,whereas for the undoped photodiode,it was much lower.An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.
The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated.The resistivity of Si was 0.1Ω·cm.ZnO films annealed at 500℃ were of the best quality.To investigate the spectral response of the photodiodes,the J-V characteristics were measured under different monochromatic lights at wavelength 420,530,570 and 630 nm.The diodes exhibit strong responsivity in the blue region at 420 nm.The responsivity is 0.22 A/W for Al doped （0.8 wt pct） photodiode,whereas for the undoped photodiode,it was much lower.An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.
基金
supported by Department of Science and Technology (DST) under the project SR/WOS-A/PS-06/2006
by Defence Research and Development Organization (DRDO),Govt. of India under the project ERIP/ER/0503515/M01/847
