纳米MOSFET栅氧化层中吸引型陷阱的参数提取方法

A method for characterization of coulomb-attractive oxide trap in nano-MOSFET

通过实验在室温下同时测量纳米MOSFET器件样品漏源电流和栅电流的低频噪声,发现一些样品器件中漏源电流不存在明显的RTS噪声,而栅电流存在显著的RTS噪声,而且该栅电流RTS噪声俘获时间随栅压增大而增大,发射时间随栅压增大而减小的特点,复合陷阱为库伦吸引型陷阱的特点.根据栅电流RTS噪声的时常数随栅压及漏压的变化关系,提取了吸引型氧化层陷阱的深度、在沟道中的横向位置和陷阱能级等信息.

In some nano-MOSFET samples,RTS noise was found only in the gate-current when the low frequency noise of both drain current and gate current was monitored simultaneously under room temperature,and was considered to be induced by a coulomb-attractive trap in the gate oxide based on its unique time-constants gate voltage dependences.Based on the trapping （detrapping） physics of coulomb-attractive traps and experimentally acquried time-constants variations with bias conditions,trap paramaters such as depth into the gate oxide,transverse location with respect to the source and energy level were extracted.