摘要
采用Slonczewski的近自由电子模型,利用转移矩阵的方法,研究了铁磁/绝缘层/有机半导体/铁磁隧道结的自旋极化载流子隧穿的温度和偏压特性.计算了T=4K和T=300K时,隧穿磁电阻(Tunneling Magnetic Resistance,TMR)随偏压的变化关系,同时还研究了零温时在有限偏压下隧穿磁电阻TMR与绝缘层厚度、有机半导体层厚度以及铁磁/有机半导体界面势垒U的变化关系.我们的计算结果较好地解释了有关的实验结论.
Based on Slonczewski's free-electron approximation and transfer matrix method,the temperature and/or bias-voltage dependence of the spin-polarized tunneling electrons in ferromagnet/insulator/organic semiconductor/ferromagnet magnetic tunneling junction are investigated.The variation of tunneling magnetoresistance (TMR) with voltage are calculated at T=4 K and T=300 K.Furthermore,the dependence of TMR on the thickness of the insulator layer or organic semiconductor layer,and OSM/FM interface potential barrier U were studied.The experimental observation reported recently can be well explained based on our calculations.
出处
《中国科学:物理学、力学、天文学》
CSCD
北大核心
2010年第4期433-439,共7页
Scientia Sinica Physica,Mechanica & Astronomica
基金
贵州省科技厅应用基础研究项目(编号:黔科通J合[2006]2004)
四川省教育厅自然科学重点项目资助(编号:07ZA095)
关键词
多层膜
有机半导体
绝缘体
铁磁层
隧穿磁电阻
multilayer films
organic semiconductor
insulator
ferromagnetic layer
tunneling magnetic resistance