铁磁/绝缘层/有机半导体/铁磁多层膜隧道结的隧穿磁电阻的温度和偏压特性研究

The temperature and voltage dependence of the tunneling magnetoresistance in ferromagnet /insulator /organic semiconductor /ferromagnet magnetic tunneling junction

采用Slonczewski的近自由电子模型,利用转移矩阵的方法,研究了铁磁/绝缘层/有机半导体/铁磁隧道结的自旋极化载流子隧穿的温度和偏压特性.计算了T=4K和T=300K时,隧穿磁电阻(Tunneling Magnetic Resistance,TMR)随偏压的变化关系,同时还研究了零温时在有限偏压下隧穿磁电阻TMR与绝缘层厚度、有机半导体层厚度以及铁磁/有机半导体界面势垒U的变化关系.我们的计算结果较好地解释了有关的实验结论.

Based on Slonczewski＇s free-electron approximation and transfer matrix method,the temperature and/or bias-voltage dependence of the spin-polarized tunneling electrons in ferromagnet/insulator/organic semiconductor/ferromagnet magnetic tunneling junction are investigated.The variation of tunneling magnetoresistance （TMR） with voltage are calculated at T=4 K and T=300 K.Furthermore,the dependence of TMR on the thickness of the insulator layer or organic semiconductor layer,and OSM/FM interface potential barrier U were studied.The experimental observation reported recently can be well explained based on our calculations.