微结构调控对Dy^(3+)掺杂GeSe_2-Ga_2Se_3-CsI玻璃红外发光性能的影响

Influence of structural modification on properties of Dy^(3+)-doped chalcohalide glass infrared fluorescence

采用传统熔融-淬冷法制备了掺杂0.1mol%Dy3+的GeSe2-Ga2Se3-CsI玻璃,研究了其热稳定性、透过光谱和红外发射光谱,用拉曼光谱表征了玻璃结构。结果表明:在808nm激发下,玻璃近红外发射荧光中心位于1.3μm,荧光半峰宽约90nm;Dy3+的1.3μm发光性能(6F11/2·6H9/2→6H15/2跃迁)由玻璃Dy3+局域环境所决定。当I/Ga摩尔比固定为1时,Dy3+的1.3μm荧光寿命随着[Ge(Ga)IxSe4-x]、[Ge(Ga)I4]和[Ga2I7]-新的低声子能量基团的形成而增加;当I/Ga摩尔比变化时,微小的玻璃组分变化导致Dy3+局域环境晶体场的变化,从而引起Dy3+:1.3μm发光寿命急剧变化,其最大值可达到2885μs。Dy3+掺杂的GeSe2-Ga2Se3-CsI玻璃可通过微结构调控获得较优良的1.3μm红外光输出。

The GeSe2-Ga2Se3-CsI chalcohalide glasses doped with 0.1 mol% Dy^3＋ were prepared using traditional melting method.The thermal stability,transmission spectrum and infrared emission spectrum properties of the glasses were investigated.The structure of glasses was studied by Raman spectrum.Upon excitation at 808 nm diode laser,1.3 μm near-infrared fluorescence had been observed with a broad full width at half maximum（FWHM） of about 90 nm.The behavior of Dy^3＋（6F11/2·6H9/2 → 6H15/2 transition） in glasses was sensitive to its local environment.When I/Ga=1,the enhancement of lifetime increased with the formation of Ge（Ga）IxSe4-x,Ge（Ga）I4 and Ga2I7-low-phonon energy units.When I/Ga ratio changed,the symmetry of the crystal field changed synchronously with tiny compositional adjustments which caused the intense change of 1.3 μm fluorescence lifetime,the maximum value was 2 885 μs.Dy^3 ＋-doped GeSe2-Ga2Se3-CsI chalcohalide glasses can obtain 1.3 μm excellent infrared fluorescence by structural modification.