摘要
使用自动变温霍耳测试系统测定了减压MOVPE外延生长的硅δ掺杂GaAs/Al0.3Ga0.7As异质结构,其在15K和300K时的电子迁移率分别为2.6×105cm2/V·s和7300cm2/V·s,二维电子浓度分别为4.65×1011/cm2和1.17×1012/cm2,均比相同结构的生长体掺杂GaAs/Al0.3Ga0.7As异质结构样品有很大提高,证实了使用δ掺杂技术取代体掺杂技术可以获得电学性能更佳的GaAs/AlxGa1-xAs异质结构.
The carrier mobilities and sheet concentrations of Si δ doped GaAs/Al 0.3 Ga 0.7 As heterostructures grown by low pressure MOVPE have been determined in the temperature range of 10~300K with a sophisticated automatic Hall measurement system.An electron mobility of 2.6×10 5cm 2/V·s and a sheet electron concentration of 4.65×10 11 /cm 2 were observed at 15K.And an electron mobility of 7300cm 2/V·s and a sheet electron concentration of 1.17×10 12 /cm 2 were observed at 300K.Both the mobility and sheet concentration are higher than those of MOVPE grown Si bulk doped GaAs/Al 0.3 Ga 0.7 As heterostructures with the same structure.It is demonstrated that.instead of bulk doping technique,a superior GaAs/Al xGa 1-x As heterostructure can be obtained by MOVPE δ doping technique.
基金
国家教委博士点基金