电压对氮掺杂TiO_2/Ti光催化剂在可见光下催化性能的影响

Impact on photocatalytic performance of N-doped TiO_2/Ti photocatalyst prepared by different voltage under visible light

为拓展TiO2对可见光的响应范围,采用先恒流再恒压的阳极氧化法制备了TiO2/Ti光催化剂,并运用等离子体基离子注入(PBII)技术对TiO2/Ti光催化剂进行了氮的掺杂改性研究。通过SEM和XRD对不同电压下制备的氮掺杂TiO2/Ti光催化剂进行了分析。结果表明,TiO2氧化膜粗糙多孔,主要是由锐钛矿相和金红石相组成,其最佳的制备电压为160V,离子注入条件为-30kV,4×105N.cm-2。氮元素主要以三种形态存在于TiO2的薄膜上,即原子β-N、分子γ-N和O-Ti-N。在可见光的照射下与未掺杂的TiO2/Ti光催化剂相比,氮掺杂的TiO2/Ti光催化剂表现出较好的光催化活性,其对罗丹明B的去除效率提高了12%。

To improve the visible-light photoresponse scope of TiO2, TiO2/Ti photocatalysts were prepared by a sequence of constant current and constant voltage control circuits. The prepared TiOJTi photocatalysts were modified by nitrogen used plasma based ion implantation （PBII） method. N-doped TiO2/Ti photocatalyst prepared under different voltage were characterized by SEM and XRD. The results showed that the morphology of the TiO2 film, consist of anatase and rutile phase, was rough and porous. The optical prepared condition was voltage 160 V and doping condition -30 kV, 4 ×10^5N·cm^-2 The nitrogen species in the TiO2 film was β-N,γ-N and O-Ti-N. The N-doped TiOE/Ti photocatalyst had better photocatalytic activity than un-doped under visible light irradiation, rhodamine B removal efficiency was improved 12%.