1MeV中子辐照SiGe HBT器件的数值模拟

Numerical Simulation of SiGe HBT Irradiated by 1MeV Neutron Beam

分析了SiGe HBT器件中子辐照效应损伤机理。运用MEDICI软件,对SiGe HBT器件中子辐照效应的数值模拟进行了探索性研究。计算了1MeV中子在不同辐照注量下对SiGe HBT器件交直流特征参数的影响规律;中子辐照损伤与SiGe HBT器件中Ge组分含量关系;以及不同缺陷类型对SiGe HBT器件交直流特征参数的影响规律。通过对SiGe HBT器件辐照效应的数值模拟计算,验证了相关辐照实验得出的规律。

With the analysis on the mechanisms of the SiGe HBT irradiated by 1MeV neutron beam, DC and AC characteristics of SiGe HBT＇s after neutron radiation were simulated by using the two-dimensional device numerical simulation software-MEDICI. The characteristic parameters were simulated in different neutron radiation fluence, different Ge content, different electron trap levels, respectively. The primary rules of collector current Ic, base current IB, current gain β and cut-off frequency frof SiGe HBT after neutron radiation were concluded.