摘要
描述了ONO反熔丝的物理结构,采用ONO薄膜传导模型分析了ONO反熔丝结构在受到电离辐照时,其内部电子-空穴的运动规律。分别对ONO反熔丝FPGA A1460A和A40MX04进行了电离辐照实验,测试了电流与辐照剂量的关系以及FPGA功能失效阈值。理论分析和实验数据说明了该结构比单层SiO2具有更好的抗电离辐照性能。
The ONO antifuse configuration was discribed. The Conduction mechanism of electron-hole pairs due to ionizing in the ONO material was analyzed. The TID（Total Ionizing Dose） Radiation performance of ONO antifuse FPGA（A1460A and A40MX04） were test , the current as a function of total dose and function failure point were obtained. All of results proved that the ONO antifuse have better TID performance than general single SiO2.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2010年第3期339-341,353,共4页
Nuclear Electronics & Detection Technology
基金
国防科技基础研究基金资助课题
