摘要
报道了多晶硅薄膜的制备方法及光生截流子在多晶硅晶界区域的收集、复合情况，并采用剖面分析方法研究了杂质的分布对多晶硅薄膜太阳电池电性能的影响。
Polycrystalline silicon films were prepared by chemical vapor deposition(CVD). The collection and recombination of photon induced carriers at grain boundaries were discussed. Influence of impurities distributin on the electrical properties of polyrystalline silicon solar cell was studied with depth profile analysis.
出处
《真空科学与技术》
CSCD
北大核心
1998年第3期216-219,共4页
Vacuum Science and Technology
关键词
多晶硅
薄膜
杂质分布
剖面分析
电阻率
Polycrystal silicon thin film, Impurity distribution, Profile analysis, Resistivity
