摘要
用真空双蒸发源交替蒸发法和单蒸发源混合瞬时蒸发法制备了Ag-MgF2金属陶瓷薄膜。透射电镜、电子衍射、X射线衍射以及X射线光电子能谱分析结果表明,薄膜由晶态超微粒Ag镶嵌于主要为非晶态的MgF2中构成。Ag-MgF2形成的金属陶瓷复合晶体结构所对应的主要谱峰为d=0.26102,0.23540,0.20393nm。用真空单蒸发源混合瞬时蒸发法制备的Ag-MgF2薄膜表面元素的结合能大于双蒸发源交替蒸发法制备的薄膜表面元素的结合能。
Ag-MgF2 cermet films were successfully prepared by vacuum deposition. The microstructures and the electronic properties of the films were invesgated by transmission electron microscopy, electron diffraction, X-ray diffraction and X-ray photoelectron spectroscopy. The results showed that Ag-MgF2 cermet film consists mainly of amorphous MgF2 with Ag crystallites embedded inside. The major peaks of Ag-MgF2 crystalline cermet micrstructures are d =0.26102,0.23540,0.20393 nm respectively.The surface binding energies of the film prepared by single-source instantaneous deposition are higher than that prepared by double-source altemating deposition.
出处
《真空科学与技术》
CSCD
北大核心
1998年第3期220-223,共4页
Vacuum Science and Technology
基金
安徽省自然科学基金
关键词
金属陶瓷
薄膜
制备
微结构
能态
银
氟化镁
Ag-MgF_2 cermet film, Preparation, Microstructure, Energy state