摘要
自1959年集成电路发明以来,它已经对人类的生产和生活方式的很多方面产生了极其重大的影响。集成电路正以线宽每年缩小30%、集成规模增长1倍、芯片价格随之下降的惊人速度发展。光刻技术的发展始终是集成电路发展的决定因素。本文综述了深亚微米光刻和纳米光刻技术。在光学光刻部分,简要描述了光刻的历史演变,较详细综述了光学光刻的最新进展,如相移掩模、离轴照明及深紫外曝光。最后介绍了电子束曝光及X射线曝光的发展状况及SIM纳米加工的发展状况。
Since the invention of integrated circuit in 1959, it has had great impact on many ways of production and our life. It has ben developing with astonishing speed of narrowing line width 30% yearly and increasing scale of integra-tion 1 time yearly with the drop of the cost per chip. Development in lithography has been the determining factor in the de-velopment of integrated circuit. In this article, deep submicron lithography and nano processing are reviewed .On pho-tolithography,a brief review on its evoloution into present state of technology, and a detailed discussion on its frontierachievement, e. g., phase-shifting mask,off-axis illumination and deep-UV exposure ,are given. Current development inelectron beam lithography and X-ray lithography is reviewed. STM nano processing is introduced .
出处
《真空科学与技术》
CSCD
北大核心
1998年第2期83-94,共12页
Vacuum Science and Technology
关键词
光刻
电子束曝光
纳米加工
超微细图形
Photolithography,Electron beam lithography,X-ray lithography,Nano-processing