期刊文献+

超微细图形加工技术进展 被引量:2

The Development of Micro-and Nano-lithography Technology
下载PDF
导出
摘要 自1959年集成电路发明以来,它已经对人类的生产和生活方式的很多方面产生了极其重大的影响。集成电路正以线宽每年缩小30%、集成规模增长1倍、芯片价格随之下降的惊人速度发展。光刻技术的发展始终是集成电路发展的决定因素。本文综述了深亚微米光刻和纳米光刻技术。在光学光刻部分,简要描述了光刻的历史演变,较详细综述了光学光刻的最新进展,如相移掩模、离轴照明及深紫外曝光。最后介绍了电子束曝光及X射线曝光的发展状况及SIM纳米加工的发展状况。 Since the invention of integrated circuit in 1959, it has had great impact on many ways of production and our life. It has ben developing with astonishing speed of narrowing line width 30% yearly and increasing scale of integra-tion 1 time yearly with the drop of the cost per chip. Development in lithography has been the determining factor in the de-velopment of integrated circuit. In this article, deep submicron lithography and nano processing are reviewed .On pho-tolithography,a brief review on its evoloution into present state of technology, and a detailed discussion on its frontierachievement, e. g., phase-shifting mask,off-axis illumination and deep-UV exposure ,are given. Current development inelectron beam lithography and X-ray lithography is reviewed. STM nano processing is introduced .
出处 《真空科学与技术》 CSCD 北大核心 1998年第2期83-94,共12页 Vacuum Science and Technology
关键词 光刻 电子束曝光 纳米加工 超微细图形 Photolithography,Electron beam lithography,X-ray lithography,Nano-processing
  • 相关文献

参考文献24

  • 1Report of the Semiconductor Technology Workshop of SLA. Semiconductor Industry Association, USA, 1993.
  • 2McGillis D A. in:Sze S M ed;Lithography,VISI Technology, 1983:267.
  • 3Wittekoek S. Optical Lithography: Present Status and Continuafima below 0.25/an Microeleetrornic Engineering, 1994;23:43 - 55.
  • 4Tarui Y. VI.SI Technology, Fundamental and Applications. Springer Springer in Electrophysics, 1986. 12:121.
  • 5McCoy J H,Lee W,Varnell G L. Solid State Technology, 1989;32(3) :87.
  • 6陈宝钦,梁俊厚,张建宏等.超微细加工与移相掩模技术.第八届全国三束会议论文集,1995.
  • 7Brambley D,Martin B,Prewett P D.Microlithography:an Overview.Adv Mater Opt Elec,1994;4:55-74.
  • 8Levenson M D. Extending the Lifetime of Optical Lithography Technolagies with Wavefront Engineering. Jpn J Appl Plays, 1994;33:6765 - 6773.
  • 9Cheng M.Advances in DIN Lithography for 0.25 μm Technology, Development:第八届全国三束会议论文集,1995.
  • 10Reiehmanis E, Houlihan F M. Chemically Amplified Resists: Chemistry and Processes. Adv Mater Opt Elec, 1994;4:83 - 93.

同被引文献27

  • 1占红明,饶海波,张化福.基于有机电致发光显示的透明导电膜ITO[J].液晶与显示,2004,19(5):386-390. 被引量:12
  • 2中国科学院化学研究所.光致抗蚀剂[M].北京:科学出版社,1986..
  • 3Brambley D, Martin B, Prewet P. Microlithography[J]. Adv. Mater. Opt. Elec. , 1994,4,55-74.
  • 4H arnett C K, Satyalakshmi K M, Craighead H G. Low energy electron-beampatterningofamine functionalized self-assembled monolayers[J]. Appl. Phys, Lett. 2000(76):2466-2468,
  • 5Lereel M J, Craighead H G, Parikh A N, Seshadri K, AllaraD L,Sub 10 nm lithography with self assembled monolayers[J]. Appl. Phys. Lett, 1996(68) :1504-1506.
  • 6Harnett C K,Satyalakshmi K M,Craighead H G.Bioactive Templates Fabricated by Low Energy Electron Beam Lithography of Self Asse mbledMonolayers [J]. Langmuir 2001(17) : 178-182.
  • 7Geyer W, Stadler V, Eck W, Golzhauser A, Grunze M. Sauer M., Weimann T, Hinze P, Electron induced chemical nanolithography with self-assembled monolayers[J]. J. Vac. Sci. Technol, 2001(B19) : 2732-2735.
  • 8Lercel M J,Rooks M,Tiberio R C,Craighead H G,Sheen C W,Parikh A N, Allara D L. Pattern transfer of electron beam modified self-assembled monolayers for high-resolution lithography[J].J.Vac.Sci.Technol., 1995(B13) : 1139-1143.
  • 9Lereel M J,Redinbo G F,Pardo F D,Rooks M,Tiberio R C,Simpson P,Craighead H G,Sheen C W, Parikh A N, Allara D L,Electron beam lithography with monolayers of alkyhhiols and alkylsiloxanes[J].J.Vac.Sci.Technol.,1994 (B12) : 3663-3667.
  • 10Lereel M J,Whelan C S.Craighead H G.Seshadri K, Allara D L.High resolution silicon patterning with self assembled monolayer resists [J].J.Vac.Sci.Technol., 1996 (B 14) : 4085-4090.

引证文献2

二级引证文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部