摘要
研究了电荷耦合器件(CCD)位移辐射效应的损伤机理。分析了位移损伤诱发的体缺陷对CCD工作性能的影响。研究了位移损伤导致CCD电荷转移效率降低、体暗电流密度增大、暗电流尖峰以及随机电码信号(RTS)出现的规律和机理。
The displacement damage mechanism of radiation effects in charge coupled devices（CCD） is researched. It is analyzed that the displacement radiation damage induces the generation of bulk defects which degrade the performance of CCD. Displacement radiation damage induces the decrease of charge transfer efficiency, the increase of the bulk dark current , and the generation of dark current spikes and random telegraph signal（RTS）.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第2期175-179,共5页
Semiconductor Optoelectronics
关键词
CCD
位移辐射
缺陷能级
电荷转移效率
体暗电流
暗电流尖峰
RTS
CCD
displacement damage
trap energy level
charge transfer efficiency
bulk dark current
dark current spike
random telegraph signal
