摘要
设计了一种电流复用结构的双频段低噪声放大器,其中心频率为900 MHz和1 900 MHz。为减少芯片面积和提高电路性能,给出了一种改进的输入端和级间匹配网络,利用小电感LC网络代替大电感的栅极电感Lg和级间电感Ld1。仿真结果表明:该低噪放在两个需要的频带内功率增益(S21)大于16.0 dB;输入反射系数(S11)小于-18.6 dB;输出反射系数(S22)小于-12 dB;反向隔离(S12)小于-40 dB;噪声系数(NF)小于2.8 dB;线性度(IP3)大于-9.5 dBm。设计采用SMIC 0.18μmCMOS工艺,功耗为8.64 mW,电源电压1.8 V。
A dual-band current reuse low noise amplifier（LNA） with the center frequencies of 900 MHz and 1 900 MHz respectively is designed.The advanced input and inter-stage matching networks of dual-band LNA are proposed in order to reduce chip size and improve performance of LNA,where LC network with small inductor is adopted instead of gate and inter-stage inductors with large inductance value.The simulation results show that the LNA has the power gain（S21） of more than 16.0 dB,input response（S11） of less than-18.6 dB,output response（S22） of less than-12 dB,high reverse isolation（S12） of less than-40 dB,noise figure（NF） of less than 2.8 dB,and linearity（IIP3） of more than-9.5 dBm in two interest bands.SMIC 0.18 μm CMOS process is used in the design.The power consumption is 8.64 mW under the DC voltage of 1.8 V.
出处
《电子器件》
CAS
2010年第2期174-177,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助(60776052)
