反应溅射法制备Y_2O_3种子层研究

Growth of Y_2O_3 seed layer by reactive sputtering

采用直流磁控反应溅射法在双轴织构的镍钨合金(Ni-5%W)基带上生长Y2O3种子层。研究了由于水分压导致的金属靶材的氧化问题而引起反应溅射的迟滞效应,在其他最优工艺条件下通过水分压系列的试验,通过试验得出溅射电压和水分压的关系和溅射电流和水分压平衡点Pb的关系,以及水分压平衡点为反应溅射法制备Y2O3种子层薄膜的水分压最优化条件。在优化工艺条件下,反应溅射法可以制得C轴单一取向的Y2O3种子层,其面内外半高宽可达到3.874°和4.914°。

Y2O3 seed layer on biaxial texture of the nickel-tungsten alloy（Ni-5%W） was deposited by DC reactive sputtering.The hesteretic effect of reactive sputtering which was caused by metal target oxidization by water vapor.In the other optimum process conditions,the relationship between water pressure and sputtering valtage and the relationship between the water pressure balance point Pb and sputtering current were studied.When the water pressure was water pressure balance point Pb,the quality of Y2O3 thin films was best.In the optimized process conditions,we obtained pure C-axis oriented Y2O3 seed layer by the reactive sputtering method.Its FWHM of in-plane and out of plane were 3.874°and 4.914°.