A simple expression for impurity distribution after multiple diffusion processes
A simple expression for impurity distribution after multiple diffusion processes
摘要
There are several diffusion processes with different temperatures in modern semiconductor technology.The impurity distribution after these diffusion processes is analyzed and a simple expression for describing the distribution is given.It is found that the impurity distribution after multiple diffusion processes can be characterized with an effective diffusion length.The relation between this effective diffusion length and the diffusion lengths of each diffusion process is given and shows itself to be very simple and instructive.The results of the expression agree well with numerical simulations by using SUPREMⅣ.An example of the application of the expression is also shown.
There are several diffusion processes with different temperatures in modern semiconductor technology.The impurity distribution after these diffusion processes is analyzed and a simple expression for describing the distribution is given.It is found that the impurity distribution after multiple diffusion processes can be characterized with an effective diffusion length.The relation between this effective diffusion length and the diffusion lengths of each diffusion process is given and shows itself to be very simple and instructive.The results of the expression agree well with numerical simulations by using SUPREMⅣ.An example of the application of the expression is also shown.
参考文献10
-
1Park N, Cha J, Lee K, et al. aBCD 18-an advanced 0.18μm BCD technology for PMIC application. ISPSD 2009, June 2009:231.
-
2Contiero C, Andreini A, Galbiati P. Roadmap differentiation and emerging trends in BCD technology. Solid-State Device Research Conference, 2002:275.
-
3Majumdar G. Recent technologies and trends of power devices. IWPSD, 2007:787.
-
4Bakeroot B, Doutreloigne J, Moens P. A 75 V lateral IGBT for junction-isolated smart power technologies. IEEE International Symposium on ISPSD, June 2006:1.
-
5Kersys T, Andriukaitis D, Anilionis R. VMOS, UMOS technology simulation. 28th International Conference on Information Technology Interfaces, 2006:537.
-
6Kennedy D P, O'Brien R R. Analysis of the impurity atom distribution near the diffusion mask for a planar p-n junction. IBM Journal, May 1965:179.
-
7Kasley K L, Oleszek G M, Zigadlo J P. A model for the lateral junction contour of double-diffused Gaussian profiles. IEEE Trans Electron Devices, 1984, ED-31(9): 1341.
-
8Selvakumar C R. Approximations to two-step diffusion process by Prony's method. Proc IEEE, May 1982, 70(5): 514.
-
9Akiyama A, Hosoi T, Ishihara I, et al. Computer simulation of impurity diffusion in semiconductors by the Monte Carlo method. IEEE Trans Computer-Aided Design of Integrated Circuits and Systems, March 1987, 6(2): 185.
-
10Chen Xingbi. A simple description of diffused impurity distribution of an instantaneous source through a window of a mask. Proc 2nd International Conference on SSICT, October 1989:241.
-
1陈德新.论两种类型随机变量独立和的分布[J].聊城师院学报（自然科学版）,2002,15(1):29-31.
-
2高玮,谢宜臣.四探针测半导体材料杂质分布[J].佳木斯大学学报（自然科学版）,2001,19(1):100-102. 被引量：1
-
3王贵君,李晓萍.Fuzzy—区间分布数与区间拟概率度量[J].通化师范学院学报,1997,18(7):6-9.
-
4黄金超,凌能祥,程伟.非指数分布数族参数的经验Bayes估计的收敛速度[J].数学研究,2012,45(1):99-106. 被引量：3
-
5Baghery-Kabbaj Fouzia Massa-Turpin Isabelle.Impulse Control Problem of Partially Observed Diffusion Processes[J].Computer Technology and Application,2011,2(1):80-84.
-
6王贵君,王忠海.Fuzzy区间分布数与广义拟概率度量[J].大连教育学院学报,1996,12(3):50-53.
-
7邓志杰.减少半导体中杂质分布的不均匀性[J].现代材料动态,2002(1):10-10.
-
8于恒兰.非线性系统最优控制问题中性能指标的梯度计算[J].淮北煤师院学报（自然科学版）,1993,14(2):15-23.
-
9王岚,刘雅言.杂质分布对多晶硅薄膜电性能的影响[J].真空科学与技术,1998,18(3):216-219.
-
10王风雨.Ergodicity for Infinite-dimensional Diffusion Processes on Manifolds[J].Science China Mathematics,1994,37(2):137-146. 被引量：2
