碳纳米管非对称接触结构制作及电学性能研究

Fabrication and Electrical Properties of Carbon Nanotube Devices with Asymmetrical Contact Structure

实验研究了多根或单根单壁碳纳米管与非对称金属电极接触结构的制作方法。先用介电泳方法(DEP)将碳纳米管定向排列在Au电极对之间,再用电子束光刻(EBL)在碳纳米管的一端加工Al电极,获得多根碳纳米管与金铝电极的非对称接触结构。先用EBL在Au电极对一端覆盖Al电极,再用DEP排列碳纳米管,实现单根碳管与金铝电极的非对称接触结构。非对称结构器件的电学测试研究表明,器件的I-V曲线不再对称,呈现出整流特性。

Fabrication methods of multi or single carbon nanotube devices with asymmetrical metal electrode contact structure were investigated.Carbon nanotubes were aligned between two gold electrodes by dielectrophoresis（DEP）method.Then Al electrode was deposited on one end of the nanotubes by electron beam lithography（EBL）.Finally,the asymmetrical contact structure of multi carbon nanotubes and Au-Al electrodes was obtained.Al electrode was covered on one end of Au electrodes by EBL,and the carbon nanotubes were aligned by DEP.The asymmetrical contact structure of the single carbon nanotube and Au-Al electrodes was also achieved.Electrical measurement of the asymmetrical devices shows that I-V curves of the devices present the rectifying properties instead of symmetry.