高击穿电压AlGaN/GaN HEMT电力开关器件研究进展

Development of High Breakdown Voltage AlGaN/GaN HEMT for Power Switching Device

作为第三代宽禁带半导体材料的典型代表,GaN材料在各个应用领域的研究工作都受到了高度的重视。概述了基于AlGaN/GaN HEMT结构的新型高压、高频、低损耗电力开关器件的最新研究进展。从器件的结构特征入手,详细介绍了改善器件击穿特性的途径、高频开关特性的研究情况、Si衬底上AlGaN/GaN HEMT结构材料的生长、增强型器件的制备技术和功率集成电路的研究等几个国际上的热点问题。最后,对该项研究面临的问题及未来的发展趋势做了展望。

Acting as the representative of the third generation semiconductor materials,GaN becomes the focus of research all over the world.The development of AlGaN/GaN HEMT with high breakdown voltage,high frequency,and low loss is reviewed.Beginning with the introduction of the device structure,some critical problems hindering this research are discussed,including improvement of the breakdown characteristic,advantage in high frequency performance,growth of AlGaN/GaN heterostructures on Si substrate,fabrication of enhancement-mode AlGaN/GaN HEMT,and development of power integrated circuit.The possible application of high breakdown voltage AlGaN/GaN HEMT is predicted.